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Samsung Starts Mass Production of 9th Generation V-NAND: 1Tb 3D TLC NAND

23 avril 2024 à 22:30

Samsung Electronics has started mass production of its 9th generation of V-NAND memory. The first dies based on their latest NAND tech come in a 1 Tb capacity using a triple-level cell (TLC) architecture, with data transfer rates as high as 3.2 GT/s. The new 3D TLC NAND memory will initially be used to build high-capacity and high-performance SSDs, which will help to solidify Samsung's position in the storage market.

Diving right in, Samsung is conspicuously avoiding to list the number of layers in their latest generation NAND, which is the principle driving factor in increasing capacity generation-on-generation. The company's current 8th gen V-NAND is 236 layers – similar to its major competitors – and word on the street is that 9th gen V-NAND ups that to 290 layers, though this remains to be confirmed.

Regardless, Samsung says that its 9th generation V-NAND memory boasts an approximate 50% improvement in bit density over its 8th generation predecessor. Driving this gains, the company cites the miniaturization of the cell size, as well as the integration of enhanced memory cell technologies that reduce interference and extend the lifespan of the cells. With their latest NAND technology, Samsung has also been able to eliminate dummy channel holes, thus reducing the planar area of the memory cells.

Interestingly, today's announcement also marks the first time that Samsung has publicly confirmed their use of string stacking in their NAND, referring to it as their "double-stack structure." The company is widely believed to have been using sting stacking back in their 8th generation NAND as well, however this was never confirmed by the company. Regardless, the use of string stacking is only going to increase from here, as vendors look to keep adding layers to their NAND dies, while manufacturing variability and channel hole tolerances make it difficult to produce more than 150-200 layers in a single stack.

Samsung TLC V- NAND Flash Memory
  9th Gen V-NAND 8th Gen V-NAND
Layers 290? 236
Decks 2 (x145) 2 (x118)
Die Capacity 1 Tbit 1 Tbit
Die Size (mm2) ?mm2 ?mm2
Density (Gbit/mm2) ? ?
I/O Speed 3.2 GT/s
(Toggle 5.1)
2.4 GT/s
(Toggle 5.0)
Planes 6? 4
CuA / PuC Yes Yes

Speaking of channel holes, another key technological enhancement in the 9th gen V-NAND is Samsung's advanced 'channel hole etching' technology. This process improves manufacturing productivity by enabling the simultaneous creation of electron pathways within a double-stack structure. This method is crucial as it enables efficient drilling through more layers, which is increasingly important as cell layers are added.

The latest V-NAND also features the introduction of a faster NAND flash interface, Toggle DDR 5.1, which boosts peak data transfer rates by 33% to 3.2 GT/s, or almost 400MB/sec for a single die. Additionally, 9th gen V-NAND's power consumption has been reduced by 10%, according to Samsung. Though Samsung doesn't state under what conditions – presumably, this is at iso-frequency rather than max frequency.

Samsung's launch of 1Tb TLC V-NAND is set to be followed by the release of a quad-level cell (QLC) model later this year.

"We are excited to deliver the industry’s first 9th-gen V-NAND which will bring future applications leaps forward," said SungHoi Hur, Head of Flash Product & Technology of the Memory Business at Samsung Electronics. "In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product. Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid-state drive (SSD) market that meets the needs for the coming AI generation."

BIOSTAR Debuts Barebones A620MS mATX Motherboard For Ryzen 7000 Processors

15 mars 2024 à 20:30

BIOSTAR has launched its AM5-based A620MS motherboard today, bringing a new low-end option for PC users on a budget. Though BIOSTAR has not disclosed what MSRP it the A620MS motherboard will carry, the specifications of the board make it clear that it targets the lowest-end segment of the market, though it makes use of the regular A620 chipset instead of the even less expensive A620A chipset.

The A620MS sports some features typical for mATX A620 boards (which make up the vast majority of current models): two DDR5 DIMM slots that support up to two 48GB sticks, an M.2 PCIe 4.0 slot for SSDs, four SATA III ports, and a PCIe Gen4 x16 slot. The motherboard also has four debug LEDs for diagnosing CPU, RAM, GPU, and booting errors.

Meanwhile the rear I/O features a one gigabit Ethernet port, four USB 3.2 ports, analog audio jacks, two USB 2.0 ports, an HDMI 1.4 port, and DisplayPort 1.2. Though there are some more fully-featured A620 motherboards available with more ports operating at a higher specification, but the rear I/O is more or less par for the course when it comes to A620.

However, there are other things about BIOSTAR’s A620MS that implies it will be quite low-end for an A620 motherboard. It has just eight total voltage regulator modules (VRMs), which appear to be in a 6+2 or 6+1+1 phase configuration. This isn’t as low-end as BIOSTAR could have gone (ASRock offers a 4+1+1 stage board), but it is still very sparing in VRM stages compared to most other A620 motherboards. These VRMs are also not covered by a heatsink, which is also typical for boards in this segment, as they're normally paired with equally chip 65W(ish) chips.

BIOSTAR doesn’t list any official CPU restrictions in either its press release or its specification sheet; instead, the company simply lists the motherboard as compatible with Ryzen 7000 and future Ryzen 8000 processors.

While the market for AM5 motherboards includes plenty of B650(E) and X670(E) models, there’s only a handful of A620 boards in total. On Newegg, there are 14 different motherboards available, and many only differ slightly in respect to things like form factor. The cheapest of these cost $75 to $100, and while BIOSTAR didn’t reveal what price we should expect of its A620MS board, given its specifications, we expect it will land in that same $75 to $100 region.

Asus Adds Support for 64GB Memory Modules to Intel 600/700 Motherboards

14 mars 2024 à 20:30

Asus on Thursday said it has released new versions of UEFI BIOS for DDR5-supporting Intel 600/700-series motherboards that enable support for 64 GB DIMMs. As a result, Asus's latest platforms for Intel's 12th, 13th and 14th Generation Core processors with four slots for DIMM slots can now work with up to 256 GB of DDR5 memory, and motherboards with two DIMM slots can now support up to 128 GB of memory.

To gain support for 256 GB of DDR5 memory using 64 GB unbuffered DIMMs, one needs to download the latest version of UEFI BIOS for one of the Intel 600/700-series motherboards listed at the Asus website.

The list of Asus motherboards with an LGA1700 socket supporting 256 GB of DDR5 memory includes 75 boards based on a variety of Intel's 600 and 700-series chipsets, including Intel Z790, H770, B760, Z690, W680, and Q670. Though taking stock of Asus's larger motherboard offerings, this is still a bit shy of covering all of Asus's LGA1700 motherboards, which is nearly 200 models in total. So 64 GB DIMM support has only come to a fraction of their boards, at least thus far.

Otherwise, it is noteworthy that cutting-edge high-capacity DIMMs, such as 32 GB, 48GB, and 64 GB, are typically not available with the same blistering XMP clockspeeds as some of their lower-capacity counterparts, so equipping an Intel system with 256 GB of memory will come at a cost of peak memory bandwidth, on top of the typical DDR5 2 DIMM Per Channel (2DPC) frequency penalty. In fact, the fastest 48 GB modules currently offered by Corsair and G.Skill (which could be used to build systems with 192 GB of memory) top out at 6600 MT/s and 6800 MT/s, respectively. Meanwhile, for now, there are no Intel XMP 3.0-compatible 64 GB DDR5 modules from these two renowned makers.

Ultimately, the prime market for high-capacity UDIMMs at this time is going to be content creators, data scientists, and other workstation-light workloads that need a quarter-terabyte of RAM, and can justify the cost for the leading-edge DIMMs. Otherwise 16 GB and 32 GB DIMMs are likely to remain the sweet spot for the LGA1700 platform for the rest of its lifecycle.

Finally, it should be noted that Asus is also announcing (or rather, reiterating) support for 64 GB DIMMs on their AM5 motherboards. That said, this support is already baked into that platform and BIOSes, and unlike the Intel boards, a BIOS update is not needed.

Western Digital Launches PC SN5000S SSD: Low-Cost Meets High Performance

14 mars 2024 à 17:00

Western Digital has introduced its new series of SSDs aimed at mainstream PCs, which combine high performance and low cost. The Western Digital PC SN5000S family of DRAM-less drives uses the company's 3D QLC NAND memory and an in-house-developed platform, so the SSDs promise to be relatively inexpensive. Meanwhile, their sequential read performance reaches 6,000 MB/s.

Western Digital's PC SN5000S drives are based on the company's latest in-house controller, which supports a PCIe 4.0 x4 host interface and BICS6 3D QLC NAND memory. The controller fully supports Western Digital's nCache 4.0 HybridSLC technology with endurance monitoring to ensure decent performance, RSA-3K and SHA-384 encryption, and TCG Opal 2.02 and Pyrite security capabilities.

On the capacity side, Western Digital's PC SN5000S drives will be available in 512 GB, 1 TB, and 2 TB configurations. As for performance, the 2TB PC SN5000S is rated for up to 6,000 MB/s sequential read speed, up to 5,600 MB/s sequential write speed, up to 750,000 random read IOPS, and up to 900,000 random write IOPS. The SSDs will be available in M.2-2230 and M.2-2280 form factors.

Western Digital SN5000S SSD Specifications
Capacity 512 GB 1 TB 2 TB
Controller Western Digital's proprietary controller
NAND Flash Western Digital / Kioxia BiCS 6 176L 3D QLC NAND
Form-Factor, Interface Single-Sided M.2-2280, PCIe 4.0 x4, NVMe 2.0
Sequential Read 6000 MB/s
Sequential Write 4200 MB/s 5400 MB/s 5600 MB/s
Random Read IOPS 500K 750K
Random Write IOPS 850K 900K
Peak Power 6.1W 6.5W 6.9W
SLC Caching Yes
Security Capabilities TCG Opal 2.02 and Pyrite
Warranty 5 years
Write Endurance 150 TBW 300 TBW 600 TBW

When it comes to endurance, Western Digital rates 2TB PC SN5000S at 600 terabytes to be written, 1TB version at 300TBW, and 512GB at 150TBW, which is significantly lower compared to entry-level SSDs with similar capacities (yet higher compared to WD Green-branded drives). 

While the performance of Western Digital's PC SN5000S hardly impresses our avid readers, who tend to look at the highest-end SSDs, 1TB and 2TB versions offer considerably higher performance than most entry-level drives on the market today. What disappoints is the relatively low endurance of Western Digital's new SSDs compared to entry-level drives from other makers.

Western Digital primarily markets its PC SN5000S solid-state drives for OEMs, where they succeed the company's SN740-series. For PC makers, the drives are fast enough, and perhaps more importantly, they support advanced encryption technologies as well as TCG Opal 2.02 and Pyrite security capabilities, which is crucial for desktops and laptops sold to various U.S. government agencies.

Source: Western Digital

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