Samsung Electronics has started mass production of its 9th generation of V-NAND memory. The first dies based on their latest NAND tech come in a 1 Tb capacity using a triple-level cell (TLC) architecture, with data transfer rates as high as 3.2 GT/s. The new 3D TLC NAND memory will initially be used to build high-capacity and high-performance SSDs, which will help to solidify Samsung's position in the storage market.

Diving right in, Samsung is conspicuously avoiding to list the number of layers in their latest generation NAND, which is the principle driving factor in increasing capacity generation-on-generation. The company's current 8th gen V-NAND is 236 layers – similar to its major competitors – and word on the street is that 9th gen V-NAND ups that to 290 layers, though this remains to be confirmed.

Regardless, Samsung says that its 9th generation V-NAND memory boasts an approximate 50% improvement in bit density over its 8th generation predecessor. Driving this gains, the company cites the miniaturization of the cell size, as well as the integration of enhanced memory cell technologies that reduce interference and extend the lifespan of the cells. With their latest NAND technology, Samsung has also been able to eliminate dummy channel holes, thus reducing the planar area of the memory cells.

Interestingly, today's announcement also marks the first time that Samsung has publicly confirmed their use of string stacking in their NAND, referring to it as their "double-stack structure." The company is widely believed to have been using sting stacking back in their 8th generation NAND as well, however this was never confirmed by the company. Regardless, the use of string stacking is only going to increase from here, as vendors look to keep adding layers to their NAND dies, while manufacturing variability and channel hole tolerances make it difficult to produce more than 150-200 layers in a single stack.

Speaking of channel holes, another key technological enhancement in the 9th gen V-NAND is Samsung's advanced 'channel hole etching' technology. This process improves manufacturing productivity by enabling the simultaneous creation of electron pathways within a double-stack structure. This method is crucial as it enables efficient drilling through more layers, which is increasingly important as cell layers are added.

The latest V-NAND also features the introduction of a faster NAND flash interface, Toggle DDR 5.1, which boosts peak data transfer rates by 33% to 3.2 GT/s, or almost 400MB/sec for a single die. Additionally, 9th gen V-NAND's power consumption has been reduced by 10%, according to Samsung. Though Samsung doesn't state under what conditions – presumably, this is at iso-frequency rather than max frequency.

Samsung's launch of 1Tb TLC V-NAND is set to be followed by the release of a quad-level cell (QLC) model later this year.

"We are excited to deliver the industry’s first 9th-gen V-NAND which will bring future applications leaps forward," said SungHoi Hur, Head of Flash Product & Technology of the Memory Business at Samsung Electronics. "In order to address the evolving needs for NAND flash solutions, Samsung has pushed the boundaries in cell architecture and operational scheme for our next-generation product. Through our latest V-NAND, Samsung will continue to set the trend for the high-performance, high-density solid-state drive (SSD) market that meets the needs for the coming AI generation."

Western Digital has introduced its new series of SSDs aimed at mainstream PCs, which combine high performance and low cost. The Western Digital PC SN5000S family of DRAM-less drives uses the company's 3D QLC NAND memory and an in-house-developed platform, so the SSDs promise to be relatively inexpensive. Meanwhile, their sequential read performance reaches 6,000 MB/s.

Western Digital's PC SN5000S drives are based on the company's latest in-house controller, which supports a PCIe 4.0 x4 host interface and BICS6 3D QLC NAND memory. The controller fully supports Western Digital's nCache 4.0 HybridSLC technology with endurance monitoring to ensure decent performance, RSA-3K and SHA-384 encryption, and TCG Opal 2.02 and Pyrite security capabilities.

On the capacity side, Western Digital's PC SN5000S drives will be available in 512 GB, 1 TB, and 2 TB configurations. As for performance, the 2TB PC SN5000S is rated for up to 6,000 MB/s sequential read speed, up to 5,600 MB/s sequential write speed, up to 750,000 random read IOPS, and up to 900,000 random write IOPS. The SSDs will be available in M.2-2230 and M.2-2280 form factors.

When it comes to endurance, Western Digital rates 2TB PC SN5000S at 600 terabytes to be written, 1TB version at 300TBW, and 512GB at 150TBW, which is significantly lower compared to entry-level SSDs with similar capacities (yet higher compared to WD Green-branded drives). 

While the performance of Western Digital's PC SN5000S hardly impresses our avid readers, who tend to look at the highest-end SSDs, 1TB and 2TB versions offer considerably higher performance than most entry-level drives on the market today. What disappoints is the relatively low endurance of Western Digital's new SSDs compared to entry-level drives from other makers.

Western Digital primarily markets its PC SN5000S solid-state drives for OEMs, where they succeed the company's SN740-series. For PC makers, the drives are fast enough, and perhaps more importantly, they support advanced encryption technologies as well as TCG Opal 2.02 and Pyrite security capabilities, which is crucial for desktops and laptops sold to various U.S. government agencies.

Source: Western Digital

Patriot has formally introduced its first solid-state drives featuring a PCIe 5.0 x4 interface aimed at demanding users. The Viper PV553 SSD uses the company's all-new active cooling system boasting an aluminum radiator, a blower fan, and a special heat shield that promises to ensure the best possible cooling for consistent performance under high workloads.

Set to be available in 1 TB, 2 TB, and 4 TB configurations, Patriot's Viper PV553 uses Micron's 232-layer 3D TLC NAND memory and we presume Phison's PS5026-E26 controller as Patriot is a loyal partner of the Taiwan-based SSD controller developer.

As for performance, Patriot rates its 2 TB and 4 TB PV553 for sequential read/write speeds of up to 12,400 MB/s and 11,800 MB/s as well as up to 1.4 million random 4K read and write IOPS. Meanwhile, the 1 TB model is slightly slower and offers read/write speeds of up to 11,700 MB/s and 9,500 MB/s as well as up to 1.3/1.4 million read/write IOPS.

The drives come in an M.2-2280 form-factor and are compatible with desktops that have sufficient space inside as Patriot's Viper PV553 SSDs are equipped with quite an extraordinary cooling system to take away 11W of thermal power that they can dissipate. The cooler (which features a 16.5 mm z-height) employs a rather big aluminum radiator that covers both the controller and memory chips, a blower fan, thermal pads on both sides of the drive, and an aluminum casing — which the company calls heat shield — that directs air produced by the fan through the radiator's fins to maximize cooling performance.

The extensive cooling is supposed to ensure that Patriot's Viper PV553 drives sustains performance even under severe workloads. In fact, Patriot says that the cooler ensures that the drive maintains temperature at about 45ºC in normal room temperature conditions.

Meanwhile, PV553 SSDs are not Patriot's fastest drives. Recently the company demonstrated its Viper PV573 SSDs that use Micron's B58R 3D TLC NAND with a 2400 MT/s data transfer rate and offer a sequential read and write speed of up to 14,000 MB/s and 12,000 MB/s, respectively. That drive will perhaps get more benefits from the new cooling system, but it will be available at a later date.

As it is always the case with Patriot's premium SSDs, the Viper PV553 drives are backed by a five-year warranty and are guaranteed to sustain 700, 1400, and 3000 terabytes to be written.